Cut and blast defect to avoid chrome roll over annealing

ABSTRACT

A method and apparatus for repairing black dot defects connected to a circuit pattern in photomasks such as a photomask having a patterned chromium film on a glass substrate comprises using an energy source in the form of an energy beam to first sever the connected black dot defect from the chrome pattern forming a space between the defect and the chrome pattern. The remaining severed black dot defect is then removed using the same or different energy beam to remove the remainder of the chrome defect. An apparatus for removing black dot defects and photomasks produced by the method and apparatus of the invention are also provided.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a method and apparatus for repairing defectsin photomasks usable in the manufacture of semiconductor microcircuitsand other electronic components to transfer a circuit pattern onto aworkpiece and, in particular, to removing defects which are connected toand protrude transversely from the photomask pattern. The defects are aform of a defect commonly termed black dot defects.

2. Description of Related Art

In the manufacture of circuit patterns on electronic components such asthe manufacture of integrated circuits on semiconductor substratesphotomasks are used to transfer the desired circuit pattern onto thesubstrate workpiece. Typically, a photomask comprises a patterned metalfilm such as chromium, nickel or aluminum in a thickness of about 1,000Å deposited on a transparent base such as glass or quartz. The photomaskis generally manufactured by depositing a thin film of the metal on thesurface of the transparent substrate, coating the film metal with aphotoresist coating, exposing a pattern on the photoresist coating,developing the resist coating, and removing the metal from theunprotected areas of the film by etching leaving patterned metal film onthe substrate.

The pattern contained in the photomask is reproduced onto the surface ofa workpiece typically by placing the over the workpiece and irradiatinga radiation-sensitive resist material on the workpiece. The variety ofradiation sources for lithography that have been used or proposedinclude visible light, ultraviolet light, x-ray radiation, electrons andions. When illuminated by the radiation, the metal pattern on thephotomask serves to selectively block portions of the radiation beamwhile allowing other portions to be transmitted therethrough. In thismanner, very complex geometries having very narrow line widths can bereproduced allowing the economical production of very large scaleintegrated circuits and other devices.

A photomask is typically employed a large number of times for theproduction of numerous electronic devices. This places stringent demandson the quality of a photomask since any flaws or defects are reproducedin the workpiece which directly effects the operability of theworkpiece.

The process of fabricating photomasks, however, typically causes severaldefects in the pattern. The defects are usually classified as opaque andclear with opaque defects arising where excess metal (chrome) exists inan unwanted area and clear defects arising where metal (chrome) ismissing from a desired area. Opaque defects in a mask are commonlytermed black dot defects and typical black dot defects are shown inFIG. 1. Currently it is possible to repair such black dot defects (i.e.,remove excess chrome) by laser vaporization. The repair of isolatedblack dot defects shown as 13d in FIG. 1 and clear defects are not thesubject of this application. This invention is directed to black dotdefects which are connected to the pattern such as 13a, 13b and 13c ofFIG. 1 and the following description will be directed to this type blackdot defect.

Method and apparatus are commercially available for repairing black dotmask defects by focusing laser light energy on the defect to vaporizeand scatter the metal film molecules. Such apparatus using microscopeoptics has become automated including computer control of an optical X-Ytable and the laser source so that a mask can be scanned, the positionof opaque defects noted and stored as compared to a proper mask patternand the data placed in the apparatus for computer controlled positioningof the mask and operation of the laser to ablate (vaporize) the defects.

There are certain problems, however, in using a laser or other form ofenergy to ablate a black dot defect. For example, the ablated chromecould land on top of the adjacent chrome image being repaired and becomean annealed chrome layer due to the heat of the ablated chrome. Afterrepair, for example, the chrome thickness next to the repair can be upto twice as thick as the original chrome pattern. If an additional laserablation is required, the annealed material would not be readily ablateddue to its hardened annealed characteristics. A further problem is thepattern edge of the repair cannot be well defined because heat istransferred to the chrome line. This can make edge reconstruction offine features difficult, particularly in tight geometries having narrowline widths of less than about 1 micron. Heat supplied to remove theblack dot defect can also thermally damage the pattern line. Processeswhich melt or evaporate the attached black dot defect, therefore, createa thermal/mechanical situation where repair process tooling needs to beoptimally set to effect a satisfactory black dot repair.

There are a variety of photomasks including, x-ray masks, whichtypically have an order of magnitude of density greater than opticalmasks and laser repairs of optical mask defects while difficult isgenerally easier than repairing x-ray masks. In general, the x-ray maskshave a larger metal pattern thickness which results in an increasedthermal effect due to the laser ablation process.

A number of patents have issued in the are of repairing defectivephotomasks and include U.S. Pat. Nos. 4,200,668; 4,548,883; 4,727,234and 4,933,565. These patents discuss the various type of photomasks andthe different methods employed to repair black dot defects on the maskand the disclosures of each of the above patents are hereby incorporatedby reference. The following description will be directed to the repairof chrome metal masks but it will be appreciated by those skilled in theart that the invention applies to other masks such as optical masks,x-ray masks, attenuated phase shift masks and alternating phase shiftmasks which may be made using a variety of metals as the patterningdesign such as chrome, MoSi, and chrome oxide fluoride.

Bearing in mind the problems and deficiencies of the prior art, it is anobject of the present invention to provide a method to repair black dotdefects connected to the patterned circuitry in photomasks used to makeelectronic components such as semiconductors.

It is a further object of the invention to provide an apparatus torepair black dot defects connected to the patterned circuitry inphotomasks used to make semiconductor electronic components.

It is another object of the invention to provide photomasks made inaccordance with the method and apparatus of the invention.

Other advantages of the invention will in be readily apparent from thefollowing description.

SUMMARY OF THE INVENTION

The above and other objects and advantages, which will be apparent toone of skill in the art, are achieved in the present invention which isdirected, in a first aspect, to a method for repairing black dotdefects(i.e., mask patterning material connected to the pattern materialand protruding essentially transverse to the axis (design) of thepattern) in a photomask wherein the mask comprises a circuit pattern ofa mask patterning material (in either a negative or positive form) on amask substrate which mask pattern is transferred to an electroniccomponent substrate the method comprising the steps of:

locating and identifying a pattern connected black dot defect;

separating the connected defect from the circuit pattern using an energybeam to form an opening or space between the pattern material and theblack dot defect; and

removing the separated black dot defect using the same or a differentenergy beam.

In another aspect of the invention, an apparatus is provided forremoving black dot (protruding) defects connected to the circuit patternmaterial from photomasks used in the manufacture of electroniccomponents such as semiconductors, the photomask having a circuitpattern thereon which pattern is transferred to the electronic componentsubstrate comprising:

a holding device for securing a photomask having a circuit patternthereon;

moving means for moving the secured photomask in an X-Y plane;

detecting means for locating and identifying a pattern connected blackdot defect;

energy means to direct an energy beam at the surface of the photomaskfor removing pattern forming material from the surface of the photomask;

positioning means to position the photomask under the energy means sothat the energy beam will be directed to a particular X-Y position ofthe photomask; and

whereby when the defect is to be removed, the photomask is positionedand the energy means activated to sever (separate) the pattern connecteddefect from the photomask pattern by forming a space between the defectand the photomask pattern after which the photomask is positioned sothat the same or a different energy beam will be directed on theremaining separated defect and ablate the severed defect.

Photomasks made by the method and using the apparatus of the inventionare also provided herein.

BRIEF DESCRIPTION OF THE DRAWINGS

The features of the invention believed to be novel and the elementscharacteristic of the invention are set forth with particularity in theappended claims. The figures are for illustration purposes only and arenot drawn to scale. The invention itself, however, both as toorganization and method of operation, may best be understood byreference to the detailed description which follows taken in conjunctionwith the accompanying drawings in which:

FIG. 1 shows an enlarged top plan partial view of a photomask havingblack dot defects thereon.

FIGS. 2A, 2B and 2C are cross-sectional side views along the lines 2--2of FIG. 1 showing a series of steps to repair photomask pattern lineshaving a black dot defect.

FIG. 3 is a side view of a photomask having a black dot defect which wasrepaired using conventional energy beam ablation techniques.

FIGS. 4A-4E are perspective views of part of a photomask having acircuit line thereon showing the method of the invention for removing apattern connected black dot defect from the photomask.

DESCRIPTION OF THE PREFERRED EMBODIMENT(S)

In describing the preferred embodiment of the present invention,reference will be made herein to FIGS. 1-4E of the drawings in whichlike numerals refer to like features of the invention. Features of theinvention are not necessarily shown to scale in the drawings.

The present invention is used to remove pattern connected black dot typedefects from photomasks and any type photomask may be repaired using themethod and apparatus of the invention. Exemplary photomasks includechrome on quartz, attenuator on quartz, absorber metal in x-ray masksand chrome oxide fluoride. For convenience, the following descriptionwill be directed to chrome patterned quartz or glass substratephotomasks. These masks, as note above, typically comprise a metalpattern film such as chromium, nickel or aluminum in a thickness in theorder of about 1,000 Å deposited on a transparent base such as glass orquartz. Also for convenience, the following description will be directedto the repair of patterns in the form of conductor lines although itwill be appreciated by those skilled in the art that other type patterns(e.g. pads) may likewise be repaired using the method and apparatus ofthe invention.

Basically, the invention comprises a method for repairing a chrome linecontaining a black dot defect connected thereto by severing the defectfrom the chrome line using an energy beam such as a laser beam, ion beamand micro machining (collectively referred herein generally as "energybeam"). To sever the black dot defect from the chrome line, the energybeam is used to form a space between the defect and the chrome line sothat the defect and the chrome line are substantially severed andpreferably do not contact each other along the space formed between thechrome line and severed defect. For some repairs partial severance ofthe defect (e.g., up to 50% of the height of the defect) may beacceptable. Once the defect is separated (severed) from the chrome line,the defect may be ablated using an energy beam. By ablation is meantthat the defect material which is exemplary chrome, will be typicallyvaporized by the energy beam and removed from the mask. It has beenfound that this two step procedure of first forming a space between theconnected defect and the chrome line prevents any significant defectmaterial from redepositing during the conventional laser ablationprocess as shown in FIG. 3. The process also provides for enhancedchrome line definition not readily obtainable by conventional one-steplaser ablation techniques.

It is hypothesized that using the two step method of the invention thatthere is less heat transfer to the chrome line which results in lessdefect metal redeposition on the chrome line being repaired. Anotheradvantage of the invention is that reduced energy beam energy may beused to remove the defect. A reduced risk of glass or other photomasksubstrate damage and easier image size control is also obtained andthere is generally no need for a second laser ablation to control theimage size. A constant laser energy may also be employed as compared toprior art methods. Another important feature of the invention is thatfor methods which do not sever the defect, the energy needed to removethe defect will vary significantly with geometry and there is nopractical way to predict the amount of energy needed resulting in theuse of not enough energy and multiple repair attempts or the use of toomuch energy and line or substrate damage.

Referring now to FIG. 1, an enlarged top plan partial view of a chromeline containing photomask is shown. The photomask generally shown as 10comprises a glass or quartz substrate 11 with chrome lines 12 on thesurface thereof. The lines 12 are shown as substantially parallel and amask such as this would be used to form circuitry on a semiconductordevice having parallel circuit lines. Black dot defects 13a, 13b and 13care shown connected to two of the three chrome lines 12. These are thedefects which must be removed to provide the desired required photomask.Isolated black dot defect 13d may be removed by conventional laserablation and is not the subject of this invention.

Referring to FIG. 2A, a cross-sectional side view of the photomask ofFIG. 1 shown. The photomask 10 comprising glass substrate 11 and chromelines 12 has black dot defect 13c protruding (extending transverse) tothe longitudinal axis of the line from the edge of chrome line 12. FIG.2B shows the black dot defect 13c being severed from chrome line 12using the method of the invention to form space 19 between the chromeline 12 and defect 13c. Space 19 preferably extends from the top of thedefect to the surface of the glass substrate 11. FIG. 2C shows the blackdot defect 13c being completely removed from photomask 10.

Referring to FIG. 3, removal of a black dot defect 13c such as shown inFIG. 2A using conventional laser ablation techniques would typicallyresult in a redeposition of the ablated metal as coating 21 on chromeline 12. The chrome line 12 would therefore have additional chromematerial thereon and poor line definition which is not acceptable from aphotomask standpoint. It is this problem which the method and apparatusof the invention overcomes.

Referring now to FIGS. 4A-4E, in FIG. 4A a photomask 10 is shown securedto an X-Y table 18. X-Y tables are well-known in the art and are used tomove a secured substrate in an X-Y plane at a controlled rate anddistance over a desired repair area usually by computer control. Themask once secured to the X-Y table is caused to move in an X-Y directionas shown by the arrows. The photomask 10 comprises a glass substrate 11,a chrome line 12 and a connected black dot defect 13 extendingtransversely from the edge of chrome line 12.

In FIG. 4B, an energy beam source 14 is directed and positioned abovethe photomask 10 and X-Y table 18 assembly. The X-Y table is positionedso that an energy beam source 14 and formed energy beam 15 are directedto point 16 at the intersection of the edge of chrome line 12 and theblack dot defect 13. The energy beam source is activated and the energybeam 15 directed at the photomask. The energy beam will ablate (remove)a portion of the black dot defect 13 depending on the size of the beamand depending on the parameters and conditions used for the ablationprocedure. The X-Y table 18 during the severance step of the process ismoved along the X direction from point 16 towards point 17 of chromeline 12. During movement of the X-Y table over the X direction frompoint 16 along line 20 to point 17, the chrome black dot defect materialis removed along the line forming a space between the chrome line 12 andthe remainder of the black dot defect 13.

Referring now to FIG. 4C, the result of the severance procedure of FIG.4B is shown whereby the energy beam source 14 and energy beam 15 are nowpositioned at point 17 of photomask 10. A space 19 has been formedbetween chrome line 12 and the remainder of black dot defect 13.

In FIG. 4D, the energy beam source 14 and energy beam 15 are positionedand directed at the remainder of black dot defect 13 and the X-Y table18 caused to move in a desired X-Y direction over the defect area toablate the remainder of black dot defect 13. The repaired photomask isshown in FIG. 4E.

While the beam used to form space 19 and to ablate the remainder(severed) defect is shown to be the same, the beam to form space 19 ispreferably different from the beam used to ablate (remove) the severeddefect 13. Also, both beams may or may not be provided by the same beamenergy source device 14. In one embodiment, the defect of the mask issevered using a focused ion beam and after the defect has been severedfrom the pattern, the mask is moved and positioned at the same masklocation under another energy source preferably a pulsed laser beam.

Any suitable beam may be used for either cutting (severing) the defector ablating the severed defect. A laser beam, ion beam (preferably afocused ion beam) and micro machining are exemplary. The beam width foreither severing or ablation can be controlled at any desired width andmay be as narrow as 0.1 micron with a focused ion beam. The beamintensity may also vary widely and is essentially determined by thepattern material.

While the present invention has been particularly described, inconjunction with a specific preferred embodiment, it is evident thatmany alternatives, modifications and variations will be apparent tothose skilled in the art in light of the foregoing description. It istherefore contemplated that the appended claims will embrace any suchalternatives, modifications and variations as falling within the truescope and spirit of the present invention.

Thus, having described the invention, what is claimed is:
 1. A methodfor repairing black dot defects in a photomask wherein the photomaskcomprises a substrate and a circuit pattern on the substrate where saidcircuit pattern is transferred to an electronic component substrate themethod comprising the steps of:locating and identifying a black dotdefect connected to the circuit pattern; separating the defect from thecircuit pattern using a first energy beam to form a space between thecircuit pattern and the black dot defect; moving the mask containing theseparated defect for use with a second energy source; and removing theseparated black dot defect using the second energy source.
 2. The methodof claim 1, wherein the first energy beam is a focused ion beam.
 3. Themethod of claim 1 wherein the substrate is quartz or glass and thecircuit pattern is chrome.
 4. The method of claim 1 wherein the secondenergy source is a pulsed laser beam.